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David Shemo Phones & Addresses

  • Avon, CT
  • Bloomfield, CT
  • Langhorne, PA
  • Lakehurst, NJ
  • Beaverton, OR
  • Santa Rosa, CA
  • Windsor, CA
  • Sonoma, CA
  • Wallingford, CT
  • Edison, NJ
  • North Brunswick, NJ

Skills

Design of Experiments • Semiconductors • Silicon • SPC • Materials Science • Thin Films • Optics • Photolithography • Liquid Crystals • CMP • Matlab • Process Engineering • Ceramic Materials

Industries

Research

Resumes

Resumes

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David Shemo

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Location:
Trenton, New Jersey
Industry:
Research
Skills:
Design of Experiments
Semiconductors
Silicon
SPC
Materials Science
Thin Films
Optics
Photolithography
Liquid Crystals
CMP
Matlab
Process Engineering
Ceramic Materials

Publications

Us Patents

Polishing Composition

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US Patent:
6355075, Mar 12, 2002
Filed:
Feb 11, 2000
Appl. No.:
09/502336
Inventors:
Katsuyoshi Ina - Iwakura,
W. Scott Rader - Sherwood OR
David M. Shemo - Aloha OR
Tetsuji Hori - Iwakura,
Assignee:
Fujimi Incorporated - Nishikasugai-gun
Fujimi America Inc. - Wilsonville OR
International Classification:
C09K 314
US Classification:
51308, 106 3
Abstract:
A polishing composition comprising an abrasive, an anticorrosive, an oxidizing agent, an acid, a pH regulator and water and having a pH within a range of from 2 to 5, wherein the abrasive is colloidal silica or fumed silica, and its primary particle size is at most 20 nm.

Polishing Composition And Method For Producing A Memory Hard Disk

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US Patent:
63328313, Dec 25, 2001
Filed:
Apr 6, 2000
Appl. No.:
9/544287
Inventors:
David M. Shemo - Aloha OR
W. S. Rader - Sherwood OR
Toshiki Owaki - Tualatin OR
Assignee:
Fujimi America Inc. - Wilsonville OR
International Classification:
B24B 100
US Classification:
451 41
Abstract:
A polishing composition for a memory hard disk, which comprises at least the following components (a) to (d): (a) from 0. 1 to 50 wt %, based on the total amount of the polishing composition, of at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, (b) from 0. 001 to 10 wt %, based on the total amount of the polishing composition, of at least one periodate selected from the group consisting of periodic acid, potassium periodate, sodium periodate and lithium periodate, (c) a buffer component to adjust the pH of the polishing composition to a range of from 2 to 5, and (d) water.

Polishing Composition And Method For Producing A Memory Hard Disk

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US Patent:
62804901, Aug 28, 2001
Filed:
Sep 27, 1999
Appl. No.:
9/405222
Inventors:
W. Scott Rader - Tualatin OR
David M. Shemo - Tualatin OR
Toshiki Owaki - Tualatin OR
Assignee:
Fujimi America Inc. - Wilsonville OR
International Classification:
C09K 314
C09G 102
B24B 100
US Classification:
51309
Abstract:
A polishing composition for a memory hard disk, which comprises the following components (a) to (d): (a) from 0. 1 to 50 wt %, based on the total amount of the polishing composition, of at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, (b) from 0. 001 to 10 wt %, based on the total amount of the polishing composition, of at least one iron salt selected from the group consisting of iron nitrate, iron sulfate, ammonium iron sulfate, iron perchlorate, iron chloride, iron citrate, ammonium iron titrate, iron oxalate, ammonium iron oxalate and an iron chelate complex salt of ethylenediaminetetraacetic acid, (c) from 0. 01 to 30 wt %, based on the total amount of the polishing composition, of at least one peroxydisulfate salt selected from the group consisting of ammonium peroxydisulfate, potassium peroxydisulfate and sodium peroxydisulfate, and (d) water.

Polishing Composition And Method For Producing A Memory Hard Disk

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US Patent:
63287749, Dec 11, 2001
Filed:
Feb 23, 2000
Appl. No.:
9/511910
Inventors:
David M. Shemo - Aloha OR
W. Scott Rader - Sherwood OR
Toshiki Owaki - Tualatin OR
Assignee:
Fujimi America Inc. - Wilsonville OR
International Classification:
C09K 314
C01G 102
US Classification:
51307
Abstract:
A polishing composition for a memory hard disk, which comprises at least the following components (a) to (d): (a) from 0. 1 to 50 wt %, based on the total amount of the polishing composition, of at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, (b) from 0. 001 to 10 wt %, based on the total amount of the polishing composition, of at least one periodate selected from the group consisting of periodic acid, potassium periodate, sodium periodate and lithium periodate, (c) from 0. 01 to 30 wt %, based on the total amount of the polishing composition, of at least one peroxydisulfate salt selected from the group consisting of ammonium peroxydisulfate, potassium peroxydisulfate and sodium peroxydisulfate, and (d) water, and which has a pH of from 2 to 7.

Polishing Composition

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US Patent:
62581406, Jul 10, 2001
Filed:
Sep 27, 1999
Appl. No.:
9/404993
Inventors:
David M. Shemo - Tualatin OR
W. Scott Rader - Tualatin OR
Toshiki Owaki - Tualatin OR
Assignee:
Fujimi America Inc. - Wilsonville OR
International Classification:
C09G 102
C09G 104
C09K 314
US Classification:
51308
Abstract:
A polishing composition for polishing a memory hard disk, which comprises the following components (a) to (d): (a) from 0. 1 to 50 wt %, based on the total amount of the polishing composition, of at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, (b) from 0. 0001 to 3. 0 wt %, based on the total amount of the polishing composition, of at least one polishing resistance-reducing agent selected from the group consisting of a surfactant, a water-soluble polymer and a polyelectrolyte, (c) from 0. 001 to 40 wt %, based on the total amount of the polishing composition, of at least one polishing accelerator selected from the group consisting of an inorganic acid, an organic acid and their aluminum, iron, nickel and cobalt salts, and (d) water.
David M Shemo from Avon, CT, age ~51 Get Report