Search

Nikki Edleman Phones & Addresses

  • 11 Sunset Ave, Pawling, NY 12564 (845) 855-4796
  • 1738 Chicago Ave, Evanston, IL 60201 (847) 475-2141
  • Washington, DC
  • 2330 Schaffer Rd, Pottstown, PA 19464 (610) 323-1786
  • Pittsburgh, PA
  • Bechtelsville, PA

Publications

Us Patents

Contact Patterning Method With Transition Etch Feedback

View page
US Patent:
7998869, Aug 16, 2011
Filed:
Oct 31, 2008
Appl. No.:
12/262860
Inventors:
Sung-Chul Park - Fishkill NY,
Nikki Edleman - Pawling NY,
Alois Gutmann - Heverlee,
Fang Chen - Singapore,
Assignee:
Samsung Electronics Co., Ltd. - Suwon-si, Gyeonggi-do
International Classification:
H01L 21/311
US Classification:
438700
Abstract:
A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.

Contact Patterning Method With Transition Etch Feedback

View page
US Patent:
8236699, Aug 7, 2012
Filed:
Feb 7, 2011
Appl. No.:
13/021842
Inventors:
Sung-Chul Park - Fishkill NY,
Nikki Edleman - Pawling NY,
Alois Gutmann - Heverlee,
Fang Chen - Singapore,
Assignee:
Infineon North - Durham NC
Samsung Electronics Co., Ltd. - Suwon-si
International Business Machines Corporation - Armonk NY
Chartered Semiconductor Manufacturing Ltd. - Singapore
Infineon Technologies AG - Neubiberg
International Classification:
H01L 21/311
US Classification:
438700
Abstract:
A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.

High Work Function Transparent Conducting Oxides As Anodes For Organic Light-Emitting Diodes

View page
US Patent:
2003011, Jun 26, 2003
Filed:
Aug 27, 2002
Appl. No.:
10/228521
Inventors:
Tobin Marks - Evanston IL,
He Yan - Evanston IL,
Jun Ni - Evanston IL,
Ji Cul - Waltham MA,
Anchuan Wang - Fremont CA,
Nikki Edleman - Pawling NY,
International Classification:
H05B033/12
H01B001/08
US Classification:
428/690000, 428/917000, 313/504000, 313/503000, 252/518100, 427/066000
Abstract:
Transparent conducting oxide compositions having enhanced work function, for use with anode structures and light-emitting diode devices.

Self-Limited Metal Recess For Deep Trench Metal Fill

View page
US Patent:
2005007, Mar 31, 2005
Filed:
Sep 25, 2003
Appl. No.:
10/605362
Inventors:
Nikki Edleman - Pawling NY,
Richard Wise - New Windsor NY,
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - ARMONK NY
International Classification:
H01L021/8234
US Classification:
438243000, 438386000
Abstract:
Disclosed is a method of manufacturing a deep trench capacitor structure that forms a trench in a substrate, lines the trench with a polysilicon liner, and forms titanium nitride columns along the polysilicon liner. The method etches the titanium nitride columns using chlorine-based dry chemistry that is substantially isotropic. This etching process removes the upper portion of the titanium nitride columns without affecting the polysilicon liner. The etching process attacks only in the uppermost portion of the titanium nitride columns such that, after the etching process is completed, the remaining lower portions of the titanium nitride columns are substantially unaffected by the etching process. Then, the method fills the space between the titanium nitride columns and the upper portion of the trench with additional polysilicon material. The process of filling the space simultaneously forms a polysilicon plug and polysilicon cap.
Nikki L Edleman from Pawling, NY, age ~45 Get Report