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Robert D Huttemann

from Macungie, PA
Age ~59

Robert Huttemann Phones & Addresses

  • 5583 Princeton Rd, Macungie, PA 18062 (610) 395-6755
  • 213 Lakeside Dr, Glassboro, NJ 08028
  • Denver, CO
  • Clayton, NJ
  • Wescosville, PA

Work

Company: Ner data products Position: Vice president

Industries

Facilities Services

Public records

Vehicle Records

Robert Huttemann

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Address:
213 Lakeside Dr, Glassboro, NJ 08028
VIN:
3MEHM02137R643710
Make:
MERCURY
Model:
MILAN
Year:
2007

Resumes

Resumes

Robert Huttemann Photo 1

Vice President At Ner Data Products

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Position:
Vice President at NER Data Products
Location:
Greater Philadelphia Area
Industry:
Facilities Services
Work:
NER Data Products
Vice President

Business Records

Name / Title
Company / Classification
Phones & Addresses
Robert Huttemann
Vp And Generla Manager
Ner Data Products, Inc
Mfg Computer Peripherals Mfg Carbon Paper/Ink Rib Mfg Photo Equip/Supplies Mfg Computer Storage Dvc Mfg Nonwd Partition/Fixt
307 Delsea Dr S, Aura, NJ 08028
(856) 881-5524

Publications

Us Patents

Thin Film Resistor Device And A Method Of Manufacture Therefor

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US Patent:
6703666, Mar 9, 2004
Filed:
Jul 12, 2000
Appl. No.:
09/614992
Inventors:
Robert D. Huttemann - Macungie PA
George J. Terefenko - Mohnton PA
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01L 2362
US Classification:
257359, 257383, 257536, 438384, 438382
Abstract:
The present invention provides a thin film resistor and method of manufacture therefor. The thin film resistor comprises a resistive layer located on a first dielectric layer, first and second contact pads located on the resistive layer, and a second dielectric layer located over the resistive layer and the first and second contact pads. In an illustrative embodiment, the thin film resistor further includes a first interconnect that contacts the first contact pad and a second interconnect that contacts the second contact pad.

Thin Film Resistor Device And A Method Of Manufacture Therefor

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US Patent:
7276767, Oct 2, 2007
Filed:
Jan 22, 2004
Appl. No.:
10/762962
Inventors:
Robert D. Huttemann - Macungie PA,
George J. Terefenko - Mohnton PA,
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01L 23/58
US Classification:
257359, 257383, 257516
Abstract:
The present invention provides a thin film resistor and method of manufacture therefor. The thin film resistor comprises a resistive layer located on a first dielectric layer, first and second contact pads located on the resistive layer, and a second dielectric layer located over the resistive layer and the first and second contact pads. In an illustrative embodiment, the thin film resistor further includes a first interconnect that contacts the first contact pad and a second interconnect that contacts the second contact pad.

Semiconductor Device Having Tungsten Plugs

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US Patent:
4981550, Jan 1, 1991
Filed:
Nov 9, 1988
Appl. No.:
7/270389
Inventors:
Robert D. Huttemann - Macungie PA
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
C23F 102
US Classification:
156643
Abstract:
A metallization scheme useful for integrated circuits uses a buffer layer to ensure that the etch back of a contact metal, such as tungsten, deposited over the buffer layer, can be controlled to form a complete tungsten plug in a via while the tungsten on the dielectric is completely removed. The buffer layer, once exposed, reacts with the plasma etch to form non-volatile compounds which decrease the free surface mobility of the etching species. This active species depletion thus decreases the etch rate of the tungsten within the vias. Continued exposure of unreacted buffer material is ensured by performing a sputter cleaning simultaneously with the plasma etch.

Monolithic Hybrid Integrated Circuits

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US Patent:
4344223, Aug 17, 1982
Filed:
Nov 26, 1980
Appl. No.:
6/210730
Inventors:
Gary A. Bulger - Coplay PA
Lyle D. Heck - Reading PA
Robert D. Huttemann - Wescosville PA
Joseph M. Morabito - Bethlehem PA
Raymond C. Pitetti - Wescosville PA
Burton A. Unger - Berkeley Heights NJ
Donald J. Vallere - Reading PA
Assignee:
Western Electric Company, Inc. - New York NY
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
H01L 2118
US Classification:
29577C
Abstract:
A method of fabricating a thin film semiconductor hybrid circuit is disclosed. After processing of the integrated circuit in the semiconductor wafer up to the point of establishing ohmic contacts (14) to devices (13), a thin film RC circuit is fabricated on an insulating layer (11,12) overlying the wafer. This is accomplished by first forming the capacitor anodes (15') on the insulator by depositing and etching a layer such as alpha tantalum. Resistors (16) are then formed by depositing and etching a layer such as tantalum nitride. Portions of the capacitor anodes are then anodized using an appropriate mask (17) to form the capacitor dielectric. Capacitor counterelectrodes (20') and interconnect conductors (20'") are formed by depositing and etching successive layers of metal such as nickel-chromium and gold. After all thin film components are formed, the resistors and capacitors are stabilized by heating the circuit in an atmosphere comprising high pressure steam.
Robert D Huttemann from Macungie, PA, age ~59 Get Report