20030059692, Mar 27, 2003
Samuel Pearlman - Lancaster PA,
Robert Kreider - Lancaster PA,
Richard LaPeruta - Lititz PA,
430/025000, 430/024000, 430/026000
A method of manufacturing a luminescent screen assembly, having a light-absorbing matrix with a plurality of substantially equally-sized openings therein, on an inner surface of a faceplate panel of a cathode-ray tube (CRT) is provided. The tube has a color selection electrode spaced from the inner surface of the faceplate panel in which the color selection electrode has a plurality of strands interleaved with slots. The method includes the steps of providing a first photoresist layer, whose solubility is altered when exposed to light, such that greater dosages of light reduce the solubility thereof. The first photoresist layer is applied to the inner surface of the faceplate panel. The first photoresist layer is exposed to light from a light source, located relative to a central source position, as well as two symmetrical source positions relative to the central source position. The exposure selectively alters the solubility of the illuminated areas of the first photoresist layer to produce therein regions with greater solubility and regions of lesser solubility. The regions of greater solubility are subsequently removed to uncover areas of the inner surface of the faceplate panel, while retaining the regions of lesser solubility. The inner surface of the faceplate panel and the retained regions are then overcoated with a light-absorbing material. Thereafter, the retained regions of the first photoresist layer and the light-absorbing material thereon are removed, uncovering portions of the faceplate panel and defining first guardbands of light-absorbing material on the inner surface of the faceplate panel. This photolithographic process is repeated with a second photoresist layer and a third photoresist layer to define second guardbands of light-absorbing material and third guardbands of light-absorbing material, respectively. However, the light source positions for the second photoresist layer and the third photoresist layer are located at asymmetric positions relative to the central source position.